Master advanced Indium Arsenide HEMT architectures for cutting-edge terahertz applications. This essential guide explores high electron mobility transistor designs, focusing on InAs-based devices like single gate (SG) and double gate (DG) HEMTs to achieve superior current and frequency performance. Delve into critical noise analysis and device characterization vital for pushing the terahertz frequency regime. This book is a must-read for researchers, engineers, and graduate students in electrical engineering and semiconductor physics looking to innovate in next-generation RF and THz electronics.